Introduction and Overview: How to Read (access) this Paper

This paper serves as a dynamic resource for level set methods applied to topography issues in etching and deposition. The paper is broken up into two separate pieces; first, an introduction to level set methods, and second, examples which show the application of these techniques to semiconductor issues.

The reader may access these pages in any sequence. The supplied order is designed to supply the relevant details in a sequence which helps explain the underlying techniques before going to the examples; readers more interested in results can go directly to those sections.

Previous work on level set methods applied to etching and deposition was developed in the three papers

Those papers introduce the application of level set methods to such problems, and include the effects of ion-milling, masking, photolithography development, complex flux laws, visibility, and material-dependent etch rates.

This paper extends that work, and provides for the effects of surface diffusion, thin layers, triple points, and the effects of re-deposition and re-emission on the evolving surface profile. In addition, this site contains all the mpeg movies of the various simulations. An overview article about level set methods applied to semiconductor manufacturing may be found by consulting:

An Overview of Level Set Methods for Etching, Deposition, and Lithography Development,
J.A. Sethian and D. Adalsteinsson,
IEEE Transactions on Semiconductor Devices, 1996. 10, 1, pp.167-184, 1997.

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